|
.
|
SEMI M1-0413
| Specification for Polished Single Crystal Silicon Wafers |
|
.
|
SEMI M6-1108 (Withdrawn 0712)
| Specification for Silicon Wafers for Use as Photovoltaic Solar Cells |
|
.
|
SEMI M8-0312
| Specification for Polished Monocrystalline Silicon Test Wafers |
|
.
|
SEMI M9-0812
| Specifications for Polished Monocrystalline Gallium Arsenide Wafers |
|
.
|
SEMI M10-1296
| Standard Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide Wafers |
|
.
|
SEMI M12-0706 (Reapproved 1011)
| Specification for Serial Alphanumeric Marking of the Front Surface of Wafers |
|
.
|
SEMI M13-0706 (Reapproved 1011)
| Specification for Alphanumeric Marking of Silicon Wafers |
|
.
|
SEMI M14-89
| Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals |
|
.
|
SEMI M15-0298
| Polished Wafer Defect Limits Table for Semi-Insulating Gallium Arsenide Wafers |
|
.
|
SEMI M16-1110
| Specification for Polycrystalline Silicon |
|
.
|
SEMI M17-1110
| Guide for a Universal Wafer Grid |
|
.
|
SEMI M18-0912
| Guide for Developing Specification Forms for Order Entry of Silicon Wafers |
|
.
|
SEMI M19-91
| Specification for Electrical Properties of Bulk Gallium Arsenide Single Crystal Substrates |
|
.
|
SEMI M20-1110
| Practice for Establishing a Wafer Coordinate System |
|
.
|
SEMI M21-1110
| Guide for Assigning Addresses to Rectangular Elements in a Cartesian Array |
|
.
|
SEMI M23-0811
| Specification for Polished Monocrystalline Indium Phosphide Wafers |
|
.
|
SEMI M24-0612
| Specification for Polished Monocrystalline Silicon Premium Wafers |
|
.
|
SEMI M26-0304 (Reapproved 1110)
| Guide for the Re-Use of 100, 125, 150, and 200 mm Wafer Shipping Boxes Used to Transport Wafers |
|
.
|
SEMI M29-1296 (Reapproved 1110)
| Specification for 300 mm Shipping Box |
|
.
|
SEMI M31-0708
| Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 300 mm Wafers |
|
.
|
SEMI M32-0307 (Reapproved 0512)
| Guide to Statistical Specifications |
|
.
|
SEMI M34-0299 (Withdrawn 0211)
| Guide for Specifying SIMOX Wafers |
|
.
|
SEMI M35-1107
| Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection |
|
.
|
SEMI M36-0699
| Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers |
|
.
|
SEMI M37-0699
| Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers |
|
.
|
SEMI M38-0312
| Specification for Polished Reclaimed Silicon Wafers |
|
.
|
SEMI M39-0999
| Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals |
|
.
|
SEMI M40-1109
| Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers |
|
.
|
SEMI M41-0707
| Specification of Silicon-on-Insulator (SOI) for Power Device/ICs |
|
.
|
SEMI M42-0211
| Specification for Compound Semiconductor Epitaxial Wafers |
|
.
|
SEMI M43-1109
| Guide for Reporting Wafer Nanotopgraphy |
|
.
|
SEMI M44-0305 (Reapproved 0211)
| Guide to Conversion Factors for Interstitial Oxygen in Silicon |
|
.
|
SEMI M45-1110
| Specification for 300 mm Wafer Shipping System |
|
.
|
SEMI M46-1101E (Reapproved 0309)
| Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling |
|
.
|
SEMI M49-0912
| Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 22 nm Technology Generations |
|
.
|
SEMI M50-0310
| Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method |
|
.
|
SEMI M51-1012
| Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity |
|
.
|
SEMI M52-0912
| Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology Generations |
|
.
|
SEMI M53-0310
| Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces |
|
.
|
SEMI M54-0304 (Reapproved 0611)
| Guide for Semi-Insulating (SI) GaAs Material Parameters |
|
.
|
SEMI M55-0308
| Specification for Polished Monocrystalline Silicon Carbide Wafers |
|
.
|
SEMI M56-0307 (Reapproved 0512)
| Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias |
|
.
|
SEMI M57-0413
| Guide for Specifying Silicon Annealed Wafers |
|
.
|
SEMI M58-1109
| Test Method for Evaluating DMA Based Particle Depsoition Systems and Processes |
|
.
|
SEMI M59-0211
| Terminology for Silicon Technology |
|
.
|
SEMI M60-0306E2
| Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation |
|
.
|
SEMI M61-0612
| Specification for Silicon Epitaxial Wafers with Buried Layers |
|
.
|
SEMI M62-0413
| Specifications for Silicon Epitaxial Wafers |
|
.
|
SEMI M63-0306
| Guideline: Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction |
|
.
|
SEMI M64-0306
| Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy |
|
.
|
SEMI M65-0306E2
| Specifications for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers |
|
.
|
SEMI M66-1110
| Test Method to Extract Effective Work Function in Oxide and High-K Gate Stacks Using the MIS Flat Band Voltage-Insulator Thickness Technique |
|
.
|
SEMI M67-1109
| Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR Metrics |
|
.
|
SEMI M68-1109
| Practice for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD |
|
.
|
SEMI M70-1109
| Practice for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness |
|
.
|
SEMI M71-0912
| Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI |
|
.
|
SEMI M73-0309
| Test Methods for Extracting Relevent Characteristics from Measured Wafer Edge Profiles |
|
.
|
SEMI M74-1108 (Reapproved 0413)
| Specification for 450 mm Diameter Mechanical Handling Polished Wafers |
|
.
|
SEMI M75-0812
| Specifications for Polished Monocrystalline Gallium Antimonide Wafers |
|
.
|
SEMI M76-0710
| Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers |
|
.
|
SEMI M77-1110
| Practice for Determining Wafer Near-edge Geometry Using Roll-off Amount, ROA |
|
.
|
SEMI M78-1110
| Guide for Determining Nanotopography of Unpatterned Silicon Wafers for the 130 nm to 22 nm Generations in High Volume Manufacturing |
|
.
|
SEMI M79-0211
| Specification for Round 100 mm Polished Monocrystalline Germanium Wafers for Solar Cell Applications |
|
.
|
SEMI M80-0812
| Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm Wafers |
|
.
|
SEMI M81-0611
| Guide to Defects Found in Monocrystalline Silicon Carbide Substrates |
|
.
|
SEMI M82-0712
| Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy |
|
.
|
SEMI M83-1112
| Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors |