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SEMI MF1528-0308 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)
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Status
SUPERSEDED - Replaced by a newer version.


Abstract

This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on December 20, 2007. It was available at www.semi.org in February 2008. Originally published by ASTM International as ASTM F1528-94. Previously published November 2007.

 

Frequently it is essential to control the boron level in heavily-doped n-type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon-substrate interface. SIMS can measure the boron contamination in heavily-doped n-type substrates. This test method can be used for process control, research and development, and materials acceptance purposes.


Referenced SEMI Standards
SEMI M59 — Terminology for Silicon Technology


Revision History

SEMI MF1528-0308 (technical revision)

SEMI MF1528-1107 (technical revision)

SEMI MF1528-1104 (technical revision)

SEMI MF1528-94 (Reapproved 1999) (first SEMI publication)


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