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SEMI Downloads
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Volumes(s): Silicon Materials & Process Control
Language: English
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SEMI MF1528-0308 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry |
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SEMI Standards Copyright Policy/License Agreements |
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Status |
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SUPERSEDED - Replaced by a newer version. |
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Abstract |
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This standard
was technically approved by the global Silicon Wafer Committee. This edition was
approved for publication by the global Audits & Reviews Subcommittee on
December 20, 2007. It was available at www.semi.org in February 2008. Originally
published by ASTM International as ASTM F1528-94. Previously published November
2007.
Frequently it
is essential to control the boron level in heavily-doped n-type substrates used
to make epitaxial wafers because the boron contamination can result in
autodoping at the epitaxial silicon-substrate interface. SIMS can measure the
boron contamination in heavily-doped n-type substrates. This test method can be
used for process control, research and development, and materials acceptance
purposes.
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Referenced SEMI Standards |
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SEMI M59 —
Terminology for Silicon Technology |
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Revision History: |
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SEMI
MF1528-0308 (technical revision)
SEMI
MF1528-1107 (technical revision)
SEMI
MF1528-1104 (technical revision)
SEMI MF1528-94
(Reapproved 1999) (first SEMI publication) |
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