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SEMI MF1366-0308 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)
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Status
SUPERSEDED - Replaced by a newer version.


Abstract

This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on December 20, 2007. It was available at www.semi.org in February 2008. Originally published by ASTM International as ASTM F1366-92. Previously published November 2007.

 

The presence of oxygen can be beneficial to certain manufacturing operations by preventing the formation of process-induced defects. Oxygen is introduced into silicon wafers during the crystal growing process. Hence, it is very important to control the oxygen content of silicon crystals. SIMS can measure the oxygen concentration in heavily-doped silicon substrates used for epitaxial silicon where the free carrier concentration obscures the infrared absorption and prevents the normal use of the infrared measurement as a characterization technique for the commercial production of silicon. The SIMS measurement allows for the production of controlled oxygen content in heavily-doped silicon crystals. This test method can be used for process control, research and development, and materials acceptance purposes.


Referenced SEMI Standards

SEMI M59 — Terminology for Silicon Technology

SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials

SEMI MF723 — Practice for Conversion between Resistivity and Dopant Density for Arsenic-Doped, Boron-Doped, and Phosphorus-Doped Silicon


Revision History

SEMI MF1366-0308 (technical revision)

SEMI MF1366-1107 (technical revision)

SEMI MF1366-0305 (technical revision)

SEMI MF1366-02 (first SEMI publication)


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