This standard was technically approved by the global Compound Semiconductor
Materials Committee. This edition was approved for publication by the global
Audits & Reviews Subcommittee on January 16, 2006. It was available at
www.semi.org in February 2006.
E This standard was editorially modified in August 2006 to correct an error.
Changes were made to Table R2-2.
Sapphire substrates are utilized for hetero-epitaxial growth of gallium
nitride and related film. The properties of the films depend in part on the
properties of the substrates used. These specifications are intended to provide
specifications for the criteria necessary to use for growth of films suitable
for device production, and to unify the notation method of sapphire substrate.
SEMI M1 — Specifications for Polished Monocrystalline Silicon WafersSEMI
M3 — Specifications for Polished Monocrystalline Sapphire SubstratesSEMI
MF26 — Test Method for Determining the Orientation of a Semi-conductive Single
CrystalSEMI MF523 — Practice for Unaided Visual Inspections of Polished
Silicon Wafer SurfacesSEMI MF533 — Test Method for Thickness and Thickness
Variations of Silicon WafersSEMI MF671 — Test Method for Measuring Flat
Length on Wafers and Other Electronic MaterialsSEMI MF847 — Test Method for
Measuring Crystalographic Orientation of Flats on Single Crystal Silicon Wafers
by X-ray TechniquesSEMI MF928 — Test Method for Edge Contour of Circular
Semiconductor Wafers and Rigid Disk SubstratesSEMI MF1810 — Test Method for
Counting Preferentially Etched or Decorated Surface Defects in Silicon
WaferSEMI MF2074 — Guide for Measuring Diameter of Silicon and Other
SEMI M65-0306E2 (editorial revision)
SEMI M65-0306E (editorial revision)
SEMI M65-0306 (first published)