This standard was technically approved by the global Compound Semiconductor Materials Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on January 16, 2006. It was available at www.semi.org in February 2006.

E This standard was editorially modified in August 2006 to correct an error. Changes were made to Table R2-2.

Sapphire substrates are utilized for hetero-epitaxial growth of gallium nitride and related film. The properties of the films depend in part on the properties of the substrates used. These specifications are intended to provide specifications for the criteria necessary to use for growth of films suitable for device production, and to unify the notation method of sapphire substrate.

SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
SEMI M3 — Specifications for Polished Monocrystalline Sapphire Substrates
SEMI MF26 — Test Method for Determining the Orientation of a Semi-conductive Single Crystal
SEMI MF523 — Practice for Unaided Visual Inspections of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variations of Silicon Wafers
SEMI MF671 — Test Method for Measuring Flat Length on Wafers and Other Electronic Materials
SEMI MF847 — Test Method for Measuring Crystalographic Orientation of Flats on Single Crystal Silicon Wafers by X-ray Techniques
SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1810 — Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafer
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

SEMI M65-0306E2 (editorial revision)

SEMI M65-0306E (editorial revision)

SEMI M65-0306 (first published)