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SEMI M65-0306E2 - Specifications for Sapphire Substrates to use for Compound Semiconductor Epitaxial Wafers

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Language: English
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This standard was technically approved by the global Compound Semiconductor Materials Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on January 16, 2006. It was available at www.semi.org in February 2006.

E This standard was editorially modified in August 2006 to correct an error. Changes were made to Table R2-2.


Sapphire substrates are utilized for hetero-epitaxial growth of gallium nitride and related film. The properties of the films depend in part on the properties of the substrates used. These specifications are intended to provide specifications for the criteria necessary to use for growth of films suitable for device production, and to unify the notation method of sapphire substrate.


These specifications cover requirements for three sizes (50.8 mm, 76.2 mm, and 100 mm) of monocrystalline high-purity polished sapphire substrates. Dimensional and crystallographic orientation characteristics are the only standardized properties set forth herein. A purchase specification may require additional physical properties, which should be defined. Many of these properties are listed, together with test methods suitable for determining their magnitude. Additional information and recommended specification levels for several of these properties are provided in Related Information sections.


These specifications are directed specifically to sapphire substrates with one polished surface. Substrates polished on both sides, or unpolished, or with epitaxial film, are not covered; however, customers of such substrates will find that these specifications are useful guides in defining their requirements.


The notations of crystallographic orientation are unified to prevent possible misunderstandings. The symbols written by capital or small letters must be strictly used with distinction for the correct expression of a crystal plane.


Optical measurement methods are widely used to evaluate flatness of substrate, owing to their precise and easy handling. Therefore, the items of Sori, Taper, GBIR and GFLR are introduced, in order to examine strained or unrestrained surface flatness more appropriately.


For referee purpose, SI (System International commonly called metric) units are used for all substrates.

Referenced SEMI Standards

SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers

SEMI M3 — Specifications for Polished Monocrystalline Sapphire Substrates

SEMI MF26 — Test Method for Determining the Orientation of a Semi-conductive Single Crystal

SEMI MF523 — Practice for Unaided Visual Inspections of Polished Silicon Wafer Surfaces

SEMI MF533 — Test Method for Thickness and Thickness Variations of Silicon Wafers

SEMI MF671 — Test Method for Measuring Flat Length on Wafers and Other Electronic Materials

SEMI MF847 — Test Method for Measuring Crystalographic Orientation of Flats on Single Crystal Silicon Wafers by X-ray Techniques

SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates

SEMI MF1810 — Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafer

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

Revision History

SEMI M65-0306E2 (editorial revision)

SEMI M65-0306E (editorial revision)

SEMI M65-0306 (first published)

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