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SEMI PV43-0113 - Test Method for the Measurement of Oxygen Concentration in PV Silicon Materials for Silicon Solar Cells by Inert Gas Fusion Infrared Detection Method

Volume(s): Photovoltaic
Language: English
Type: Single Standards Download (.pdf)
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Status
CURRENT - Supported by the technical committee.


Abstract

This Standard was technically approved by the global Photovoltaic – Materials Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 20, 2012. Available at www.semiviews.org and www.semi.org in January 2013.

 

The purpose of this Test Method is to standardize analytical protocols for the measurement of oxygen concentration in PV silicon materials. This will facilitate comparison of test results between laboratories which support research and development activities or monitor or qualify PV silicon materials for purchase, sale or internal use.

 

This Test Method can be used to analyze the oxygen content in PV silicon materials for photovoltaic applications. It may also be used for semiconductor grade silicon materials.

 

Applications of this Test Method include monitoring or qualifying PV silicon materials to be used for silicon solar cell production.

 

Furthermore this Test Method may be used in research and development of PV silicon materials manufacturing and crystalline and multicrystalline silicon growth processes. It may also be used for correlation of failure or reduced performance and oxygen concentration of crystalline or multicrystalline silicon solar cells.

 

The test method described is for use with commercially available oxygen analyzers which are based on the inert gas fusion principle and use infrared detector as the measuring technique. The detection range of the method described is from 5 to 500 ppma.

 

Not all the information needed to determine the oxygen concentration in PV silicon materials is included in this Test Method. For instance, determination of the optimum temperatures for measuring the oxygen concentrations in a variety of silicon samples or optimization of the oxygen peak parameters are not described in this Test Method.

 

This Test Method does cover the particular factors (e.g., specimen preparation, calibration procedures, determination of detection limits) known to affect the most the reliability of oxygen analyses.

 

Silicon samples in a range of physical forms can used, including polysilicon powders, granules, flakes, chunks, and single and multicrystalline wafers and slugs.

 

The oxygen determinations described in this Test Method can be used irrespective of all dopant species and concentrations.

 

The limit of detection is determined by the instrumental blank value limitations, and may vary with instrumentation and preparation techniques.

 

The typical elements present in PV silicon materials for photovoltaic applications such as dopants or unwanted trace or ultra-trace level impurities do not interfere with the determination of oxygen concentrations conducted by this method.


Referenced SEMI Standards

SEMI PV17 — Specification for Virgin Silicon Feedstock Materials for Photovoltaic Applications

SEMI PV22 — Specification for Silicon Wafers for Use in Photovoltaic Solar Cells


Revision History

SEMI PV43-0113 (first published)


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