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SEMI HB1-0113 - Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices

Volume(s): HB-LED
Language: English
Type: Single Standards Download (.pdf)
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This Standard was technically approved by the global HB-LED Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 20, 2012. Available at www.semiviews.org and www.semi.org in January 2013.


Sapphire wafers are widely used in producing high brightness-light emitting diode (HB-LED) devices that are used in multiple applications such as LCD backlights, signage and solid-state lighting. Improving manufacturing efficiency and cost reductions are critical elements in enabling continued industry advance. Sapphire wafers represent a key inflection point to obtain these goals. A recent SEMI survey identified key parameters and dimensions critical to enabling manufacturing automation across multiple manufacturing steps. These specifications are intended to provide the necessary information for specifying such wafers.


These specifications cover dimensional, wafer preparation, and crystallographic orientation characteristics for five categories of single-crystal single-side polished sapphire wafers used in HB-LED manufacturing as follows:

  • Category 4a – Flatted 100 mm diameter, 650 µm thick, polished c-axis sapphire wafers

  • Category 6a – Flatted 150 mm diameter, 1,000 µm thick, polished c-axis sapphire wafers

  • Category 6b – Flatted 150 mm diameter, 1,300 µm thick, polished c-axis sapphire wafers

  • Category 6c – Notched 150 mm diameter, 1,000 µm thick, polished c-axis sapphire wafers

  • Category 6d – Notched 150 mm diameter, 1,300 µm thick, polished c-axis sapphire wafers


In addition, methods of measurements suitable for determining the characteristics in the specifications are indicated.


Those characteristics for which standardized values have been agreed upon are indicated in the specification tables.


A complete purchase specification requires that additional characteristics be specified along with test methods suitable for determining their magnitude. Guidance for such characteristics is provided in Related Information 1.


These specifications are directed specifically to sapphire wafers with one polished surface. Wafers polished on both sides, or unpolished, or with epitaxial film, are not covered; however, customers of such wafers may find that these specifications are useful guides in defining their requirements.


For referee purposes, SI (System International commonly called metric) units are used for all sapphire wafers.

Referenced SEMI Standards

SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers

SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers

SEMI M20 — Practice for Establishing a Wafer Coordinate System

SEMI M65 — Specifications for Sapphire Substrates to Use for Compound Semiconductor Epitaxial Wafers

SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal

SEMI MF523 — Practice for Unaided Visual Inspections of Polished Silicon Wafer Surfaces

SEMI MF533 — Test Method for Thickness and Thickness Variations of Silicon Wafers

SEMI MF534 — Test Method for Bow of Silicon Wafers

SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning

SEMI MF671 — Test Method for Measuring Flat Length on Wafers and Other Electronic Materials

SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-ray Techniques

SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates

SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers

SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

Revision History

SEMI HB1-0113 (first published)

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