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SEMI 3D2-0113 - Specification for Glass Carrier Wafers for 3DS-IC Applications

Volume(s): 3D-IC
Language: English
Type: Single Standards Download (.pdf)
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This Standard was technically approved by the global 3DS-IC Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 20, 2012. Available at www.semiviews.org and www.semi.org in January 2013.


This Specification is intended to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure pristine glass carrier wafers to be used in a 3DS-IC process.


This Specification describes dimensional, thermal, and wafer preparation characteristics for glass starting material that will be used as carrier wafers in a temporary bonded state.


This Specification describes glass carrier wafers with nominal diameters of 200 and 300 mm, and a thickness of 700 nm, although the wafer diameter and thickness required may vary due to process and functional variation. Such variations shall be clarified in the purchasing order or in the contract.


Methods of measurements suitable for determining the characteristics in the specifications are indicated.

Referenced SEMI Standards

SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers

SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection

SEMI M45 — Specification for 300 mm Wafer Shipping System

SEMI M59 — Terminology for Silicon Technology

SEMI MF533 — Test Method for Thickness and Thickness of Variation of Silicon Wafers

SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning

SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers

SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Non-Contact Scanning

SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Non-Contact Scanning

SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Non-Contact Scanning

SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi Substrates by Secondary Ion Mass Spectrometry

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

SEMI T7 — Specification for Back Surface Marking of Double-sided Polished Wafers with a Two-Dimensional Matrix Code Symbol

Revision History

SEMI 3D2-0113 (first published)

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