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SEMI PV1-0211 - Test Method for Measuring Trace Elements in Silicon Feedstock for Silicon Solar Cells by High-Mass Resolution Glow Discharge Mass Spectrometry

Volume(s): Photovoltaic
Language: English
Type: Single Standards Download (.pdf)
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CURRENT - Supported by the technical committee.


This Standard was technically approved by the global Photovoltaic Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on December 21, 2010. Available at www.semiviews.org and www.semi.org in February 2011; originally published March 2009; previously published July 2009.

This test method can be used to monitor the bulk trace level elemental impurities in silicon feedstock that affect the performance of the silicon solar cell, in particular, the concentration of intentionally added dopants, and unintentionally added dopants, that can affect the target bulk resistivity of the solar cell wafer, the concentration of metals (e.g., iron) and other impurities that can degrade the minority carrier lifetime of the solar cell wafer.


This test method can be used to monitor or qualify Si feedstock to be used in either crystalline or multi-crystalline silicon wafer production. This test method can be used for research and development of silicon feedstock processes and products, crystalline and multi-crystalline silicon growth processes. This method can be used to evaluate the failure or reduced performance of crystalline or multi-crystalline silicon solar cells. This test method can facilitate a unifying of protocols and test results among worldwide laboratories used for research and development support, monitoring or qualifying product for purchase or sale or internal use. For most elements the detection limit for routine analysis is on the order of 1-100 μg/kg (1-100 ppbwt).

Referenced SEMI Standards

SEMI MF28 — Test Methods for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductive Decay
SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe
SEMI MF391 — Test Method of Minority Carrier Diffusion Length in Extrinsic Semiconductors by Steady-State Surface Photovoltage
SEMI MF397 — Test Method for Resistivity of Silicon Bars Using a Two-Point Probe
SEMI MF525 — Test Method for Measuring Resistivity of Silicon Wafers Using Spreading Resistance Probe
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF1389 — Test Methods for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities
SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductive Decay by Microwave Reflectance
SEMI MF1630 — Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities
SEMI MF1724 — Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy

Revision History

SEMI PV1-0211 (technical revision)
SEMI PV1-0709 (technical revision)
SEMI PV1-0309 (first published)

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