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SEMI PV13-0211 - Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor

Volume(s): Photovoltaic
Language: English
Type: Single Standards Download (.pdf)
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Status
SUPERSEDED - Replaced by a newer version.


Abstract

This Standard was technically approved by the global Photovoltaic Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on December 21, 2010. Available at www.semiviews.org and www.semi.org in February 2011.


The excess-charge-carrier (hereafter referred to as “excess-carrier”) recombination lifetime is the central parameter to silicon solar cell device design, production, and process control. The measurement of this lifetime as it depends on excess-carrier density yields physically significant results, which allows for design optimization and efficiency prediction in solar cells. The test method also describes how this recombination lifetime can be further analyzed in terms of more fundamental parameters of importance to solar cells, such as the bulk lifetime, surface recombination velocity, or the emitter saturation current density of the dopant diffusion. This test method includes measurement by quasi-steady-state photoconductance (QSSPC) and transient techniques using an eddy-current sensor.

 


Referenced SEMI Standards

SEMI M59 — Terminology for Silicon Technology
SEMI MF28 — Test Methods for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe
SEMI MF533 — Test Methods for Thickness and Thickness Variation of Silicon Wafers
SEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped and Arsenic-Doped Silicon


Revision History

SEMI PV13-0211 (first published)


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