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SEMI Downloads
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Volumes(s): Materials
Language: English
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SEMI M76-0710 - Specification for Developmental 450 mm Diameter Polished Single Crystal Silicon Wafers |
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SEMI Standards Copyright Policy/License Agreements |
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Status |
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CURRENT - Supported by the technical committee. |
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Abstract |
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This standard was technically approved by the global Silicon Wafer Committee.
This edition was approved for publication by the global Audits & Reviews
Subcommittee on April 30, 2010. Initially available at www.semi.org in June
2010.
The developmental wafers covered by this specification
are intended for use in research and development of process and metrology equipment
and fabrication processes required for manufacturing high-density integrated circuits on
450 mm diameter single crystal silicon wafers. They can also be used to establish
the techniques and metrology necessary to support a dimensional specification
for 450 mm diameter circuit-quality (prime) wafers. |
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Referenced SEMI Standards |
SEMI E45 — Test Method for the Determination of Inorganic Contamination
from Mini Environments Using Vapor Phase Decomposition-Total Reflection X-Ray
Spectroscopy (VPD/TXRF), VPD-Atomic Absorption Spectroscopy (VPD/AAS), or
Inductively Couples Plasma-Mass Spectroscopy (VPD/ICP-MS)
SEMI M1 —
Specifications for Polished Single Crystal Silicon Wafers
SEMI M12 —
Specification for Serial Alphanumeric Marking of the Front Surface of
Wafers
SEMI M13 — Specification for Alphanumeric Marking of Silicon
Wafers
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI
M33 — Test Method for the Determination of Residual Surface Contamination on
Silicon Wafers by Means of Total Reflection X-Ray Fluorescence Spectroscopy
(TXRF)
SEMI M43 — Guide for Reporting Wafer Nanotopography
SEMI M59 —
Terminology for Silicon Technology
SEMI M67 — Practice for Determining Wafer
Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD
and ESBIR Metrics
SEMI M68 — Practice for Determining Wafer Near-Edge
Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD
SEMI
M70 — Practice for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site
Flatness
SEMI M73 — Test method for Extracting Relevant Characteristics from
Measured Wafers Edge Profiles
SEMI M74 — Specification for 450 mm Diameter
Mechanical Handling Polished Wafers
SEMI MF26 — Test Methods for Determining
the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Methods
for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF81 — Test
Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI
MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer
Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of
Silicon Wafers
SEMI MF534 — Test Method for Bow of Silicon Wafers
SEMI
MF673 — Test Methods for Measuring Resistivity of Semiconductor Wafers or Sheet
Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage
SEMI
MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in
Silicon Wafers
SEMI MF1152 — Test Method for Dimensions of Notches on Silicon
Wafers
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of
Silicon by Infrared Absorption with Short Baseline
SEMI MF1366 — Test Method
for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by
Secondary Ion Mass Spectrometry
SEMI MF1389 — Test Method for
Photoluminescence Analysis of Single Crystal Silicon for III-V
Impurities
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by
Automated Noncontact Scanning
SEMI MF1451 — Test Method for Measuring Sori on
Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for
Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by
Automated Noncontact Scanning
SEMI MF1617 — Test Method for Measuring Surface
Sodium, Aluminum, and Potassium on Silicon and Epi Substrates by Secondary Ion
Mass Spectrometry
SEMI MF1619 — Test Method for Measurement of Interstitial
Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with
p-Polarized Radiation Incident at the Brewster Angle
SEMI MF1809 — Guide for
Selection and Use for Etching Solutions to Delineate Structural Defects in
Silicon
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other
Semiconductor Wafers
SEMI T3 — Specifications for Wafer Box Labels
SEMI T7
— Specification for Back Surface Marking of Double-Side Polished Wafers with a
Two-Dimensional Matrix Code Symbol
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Revision History: |
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SEMI M76-0710 (first published) |
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